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參數資料
| 型號： | FDP3651U |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 100V, 80A, 15mOHM |
| 中文描述： | 80 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 302K |
| 代理商： | FDP3651U |
F
FDP3651U Rev. A
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 80V
V
GS
= 0V
V
GS
= ±20V
100
-
-
-
-
-
-
-
-
1
V
μ
A
μ
A
nA
I
DSS
Zero Gate Voltage Drain Current
T
C
=150
°
C
250
±100
I
GSS
Gate to Source Leakage Current
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= -250
μ
A
V
GS
= 10V , I
D
= 80A
V
GS
= 10V , I
D
= 40A
V
GS
=10V, I
D
=40A,T
J
=175
o
C
3.5
-
-
-
4.5
15
13
32
5.5
18
15
37
V
r
DS(on)
Drain to Source On Resistance
m
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
V
DS
= 25V,V
GS
= 0V
f=1MHz
-
-
-
-
-
-
-
4152
485
89
49
7
23
16
5522
728
118
69
9.8
-
-
pF
pF
pF
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 50V
I
D
= 80A
Resistive Switching Characteristics
t
(on)
t
d(on)
t
r
t
d(off)
t
f
t
(off)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 50V, I
D
= 80A
V
GS
= 10V, R
GS
= 5.0
-
-
-
-
-
-
-
64
27
29
52
26
78
ns
ns
ns
ns
ns
ns
15
16
32
14
-
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
I
SD
= 80A
I
SD
= 40A
-
-
-
-
0.99
0.88
70
202
1.25
1.0
105
303
V
V
ns
nC
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
I
s
= 40 A, di/dt = 100A/
μ
s
Notes:
1. Pulse Test:Pulse Width<300us,Duty Cycle<2.0%
2. L=0.13mH, I
AS
= 64A, V
DD
=50V, R
G
=25
, Starting T
J
=25
o
C
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