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參數資料
| 型號： | FDP603AL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor(N溝道邏輯電平增強型MOS場效應管) |
| 中文描述： | 33 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 2/4頁 |
| 文件大小： | 414K |
| 代理商： | FDP603AL |
Electrical Characteristics
T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
I
AR
OFF CHARACTERISTICS
Single Pulse Drain-Source Avalanche Energy
V
DD
= 15 V, I
D
= 12 A
100
mJ
Maximum Drain-Source Avalanche Current
12
A
BV
DSS
BV
DSS
/
T
J
I
DSS
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note
1)
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
30
V
Breakdown Voltage Temp. Coefficient
32
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
10
μA
Gate - Body Leakage, Forward
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
1
1.8
3
V
Gate Threshold Voltage Temp.Coefficient
-4.5
mV/
o
C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 25 A
0.018
0.022
T
J
=125 °C
0.026
0.035
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 10 V, V
DS
= 10 V
V
GS
= 4.5 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 25 A
0.03
0.036
I
D(on)
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
On-State Drain Current
60
A
On-State Drain Current
15
A
Forward Transconductance
24
S
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
670
pF
345
pF
95
pF
t
D(on)
Turn - On Delay Time
V
DD
= 15 V, I
D
= 25 A
V
GS
= 10 V, R
GEN
= 24
8
16
nS
t
r
t
D(off)
Turn - On Rise Time
102
140
nS
Turn - Off Delay Time
20
36
nS
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
Turn - Off Fall Time
80
115
nS
Total Gate Charge
V
= 10 V
I
D
= 25 A, V
GS
= 10 V
19
26
nC
Gate-Source Charge
3.5
nC
Gate-Drain Charge
5.5
nC
I
S
V
SD
Maximum Continuos Drain-Source Diode Forward Current
25
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 25 A
(Note 1)
1
1.3
V
T
J
= 125°C
0.85
1.1
Note
1. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%.
FDP603AL Rev.D
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