- 您現在的位置：買賣IC網 > PDF目錄375765 > FDP6690 (Fairchild Semiconductor Corporation) 30V N-Channel PowerTrench SyncFET PDF資料下載
參數資料
| 型號： | FDP6690 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 30V的N溝道的PowerTrench式SyncFET |
| 文件頁數： | 5/6頁 |
| 文件大小： | 88K |
| 代理商： | FDP6690 |
FDP6690S/FDB6690S Rev C (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6690S.
Figure 12. FDP6690S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6035AL).
Figure 13. Non-SyncFET (FDP6035AL)
body diode reverse recovery
characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.00001
0.0001
0.001
0.01
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T
A
= 100
o
C
T
A
= 25
o
C
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
F
C
TIME: 12.5ns/div
C
TIME: 12.5ns/div
相關PDF資料 |
PDF描述 |
|---|---|
| FDP6690S | 30V N-Channel PowerTrench SyncFET |
| FDB7030BL | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應管) |
| FDB7030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDB7042L | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應管) |
| FDP7042L | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDP6690S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP6N60ZU | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω |
| FDP6N60ZU_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 600V, 4.5A, 2?? |
| FDP7030 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDP7030BL | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。