- 您現在的位置：買賣IC網 > PDF目錄375781 > FDS2670 (FAIRCHILD SEMICONDUCTOR CORP) 200V N-Channel PowerTrench MOSFET PDF資料下載
參數資料
| 型號： | FDS2670 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200V N-Channel PowerTrench MOSFET |
| 中文描述： | 3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數： | 6/8頁 |
| 文件大小： | 339K |
| 代理商： | FDS2670 |
1998 Fairchild Semiconductor Corporation
Dimensions are in millimeter
Pkg type
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
SOIC
(8lds)
(12mm)
6.50
+/-0.10
5.30
+/-0.10
12.0
+/-0.3
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
10.25
min
5.50
+/-0.05
8.0
+/-0.1
4.0
+/-0.1
2.1
+/-0.10
0.450
+/-
0.150
9.2
+/-0.3
0.06
+/-0.02
P1
A0
D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
12mm
7" Dia
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
13" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Option
Dim A
Max
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Component Rotation
User Direction of Feed
SOIC(8lds) Embossed Carrier Tape
Configuration:
Figure 3.0
SOIC(8lds) Reel Configuration:
Figure 4.0
SO-8 Tape and Reel Data and Package Dimensions, continued
July 1999, Rev. B
相關PDF資料 |
PDF描述 |
|---|---|
| FDS2672 | N-Channel UltraFET Trench㈢ MOSFET 200V, 3.9A, 70mз |
| FDS2734 | N-Channel UItraFET Trench MOSFET 250V, 3.0A, 117mohm |
| FDS3170N7 | 100V N-Channel PowerTrench MOSFET |
| FDS3512 | 80V N-Channel PowerTrench MOSFET |
| FDS3570 | 80V N-Channel PowerTrench⑩ MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS2670 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS2670_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel PowerTrench MOSFET |
| FDS2672 | 功能描述:MOSFET 200V 3.9A 70OHM NCH ULTRAFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS2672 | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET |
| FDS2672_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench?? MOSFET |
發布緊急采購，3分鐘左右您將得到回復。