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參數資料
| 型號： | FDS5672 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 12000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 455K |
| 代理商： | FDS5672 |
2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
July 2005
www.fairchildsemi.com
F
1
FDS5672
N-Channel PowerTrench
MOSFET
60V, 12A, 10m
Features
r
DS(ON)
= 10m
, V
GS
= 10V, I
D
= 12A
r
DS(ON)
= 14m
, V
GS
= 6V, I
D
= 10A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Applications
DC/DC converters
SO-8
Branding Dash
1
5
2
3
4
4
3
2
1
5
6
7
8
相關PDF資料 |
PDF描述 |
|---|---|
| FDS5680 | 60V N-Channel PowerTrench⑩ MOSFET |
| FDS5682 | N-Channel PowerTrench MOSFET |
| FDS5682_NL | N-Channel PowerTrench MOSFET |
| FDS5690 | 60V N-Channel PowerTrench MOSFET |
| FDS6064N3 | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS5680 | 功能描述:MOSFET SO-8 N-CH 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS5680 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS5680 | 制造商:Fairchild Semiconductor Corporation 功能描述:60V N-CH. FET 20 MO SO8 TR |
| FDS5680_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS5682 | 功能描述:MOSFET 60V N-CH. FET 20 MO SO8 TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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