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參數資料
| 型號： | FDS5672 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 12000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 11/12頁 |
| 文件大?。?/td> | 455K |
| 代理商： | FDS5672 |
2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
www.fairchildsemi.com
F
N
11
SPICE Thermal Model
REV June 2005
FDS5672_JA Junction Ambient
Copper Area = 1sq.in
CTHERM1 TH 8 2e-3
CTHERM2 8 7 5e-3
CTHERM3 7 6 1e-2
CTHERM4 6 5 4e-2
CTHERM5 5 4 9e-2
CTHERM6 4 3 2e-1
CTHERM7 3 2 1
CTHERM8 2 TL 3
RTHERM1 TH 8 1e-1
RTHERM2 8 7 5e-1
RTHERM3 7 6 1
RTHERM4 6 5 5
RTHERM5 5 4 8
RTHERM6 4 3 12
RTHERM7 3 2 18
RTHERM8 2 TL 25
SABER Thermal Model
SABER thermal model FDS5672
Copper Area = 1sq.in
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 8 =2e-3
ctherm.ctherm2 8 7 =5e-3
ctherm.ctherm3 7 6 =1e-2
ctherm.ctherm4 6 5 =4e-2
ctherm.ctherm5 5 4 =9e-2
ctherm.ctherm6 4 3 =2e-1
ctherm.ctherm7 3 2 =1
ctherm.ctherm8 2 tl =3
rrtherm.rtherm1 th 8 =1e-1
rtherm.rtherm2 8 7 =5e-1
rtherm.rtherm3 7 6 =1
rtherm.rtherm4 6 5 =5
rtherm.rtherm5 5 4 =8
rtherm.rtherm6 4 3 =12
rtherm.rtherm7 3 2 =18
rtherm.rtherm8 2 tl =25
}
RTHERM6
RTHERM8
RTHERM7
RTHERM5
RTHERM4
RTHERM3
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
7
JUNCTION
AMBIENT
8
th
RTHERM2
RTHERM1
CTHERM7
CTHERM8
T ABLE 1. THERMAL MODELS
COMPONANT
0.04 in
2
0.28 in
2
0.52 in
2
0.76 in
2
1.0 in
2
CTHERM6
1.2e-1
1.5e-1
2.0e-1
2.0e-1
2.0e-1
CTHERM7
0.5
1.0
1.0
1.0
1.0
CTHERM8
1.3
2.8
3.0
3.0
3.0
RTHERM6
26
20
15
13
12
RTHERM7
39
24
21
19
18
RTHERM8
55
38.7
31.3
29.7
25
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS5680 | 功能描述:MOSFET SO-8 N-CH 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS5680 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS5680 | 制造商:Fairchild Semiconductor Corporation 功能描述:60V N-CH. FET 20 MO SO8 TR |
| FDS5680_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS5682 | 功能描述:MOSFET 60V N-CH. FET 20 MO SO8 TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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