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參數(shù)資料
| 型號： | FDS6064N7 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 23 A, 20 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | FLMP, SO-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 189K |
| 代理商： | FDS6064N7 |
May 2003
2002 Fairchild Semiconductor Corporation
FDS6064N3 Rev B2 (W)
FDS6064N3
20V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“l(fā)ow side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
Synchronous rectifier
DC/DC converter
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
4
5
3
6
2
7
1
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
20
±
8
23
60
3.0
–55 to +150
Units
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
– Pulsed
P
D
T
J
, T
STG
(Note 1a)
W
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
40
0.5
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDS6064N3
FDS6064N3
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關(guān)PDF資料 |
PDF描述 |
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| FDS6162N3 | 30V N-Channel PowerTrench MOSFET |
| FDS6162N7 | 30V N-Channel PowerTrench MOSFET |
| FDS6294 | 30V N-Channel Fast Switching PowerTrench? MOSFET |
| FDS6298 | 30V N-Channel Fast Switching PowerTrench MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6162N3 | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6162N7 | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6162N7 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 20V 23A 8SOIC |
| FDS6162N7 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS6294 | 功能描述:MOSFET 30V N-Ch PowerTrench Fast Switching RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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