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參數資料
型號: FDS6162N3
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 21000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: FLMP, SO-8
文件頁數: 1/6頁
文件大小: 189K
代理商: FDS6162N3
May 2003
2002 Fairchild Semiconductor Corporation
FDS6162N3 Rev B2 (W)
FDS6162N3
20V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
Synchronous rectifier
DC/DC converter
Features
21 A, 20 V
R
DS(ON)
= 4.5 m
@ V
GS
= 4.5 V
R
DS(ON)
= 6.0 m
@ V
GS
= 2.5 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
4
5
3
6
2
7
1
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
20
±
12
21
60
3.0
–55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
– Pulsed
P
D
T
J
, T
STG
(Note 1a)
W
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
40
0.5
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDS6162N3
FDS6162N3
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相關代理商/技術參數
參數描述
FDS6162N7 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6162N7 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 20V 23A 8SOIC
FDS6162N7 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDS6294 功能描述:MOSFET 30V N-Ch PowerTrench Fast Switching RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6294 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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