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參數資料
| 型號： | FDS6375 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CONN RCPT .100 100POS DUAL HORZ |
| 中文描述： | 8000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 194K |
| 代理商： | FDS6375 |
F
FDS6375 Rev. C
FDS6375
Single P-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor's
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
advanced
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
DC/DC converter
Load switch
Battery Protection
February 1999
Features
-8.0 A, -20 V. R
DS(on)
= 0.024
@ V
GS
= -4.5 V
R
DS(on)
= 0.032
@ V
GS
= -2.5 V.
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
-20
±
8
-8.0
-50
2.5
1.2
1
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
W
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
FDS6375
Device
FDS6375
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
S
D
S
S
SO-8
D
D
D
G
5
6
8
3
1
7
4
2
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PDF描述 |
|---|---|
| FDS6570A | Single N-Channel 2.5V Specified PowerTrench MOSFET |
| FDS6572A | 30V N-Channel PowerTrench MOSFET |
| FDS6574A | 30V N-Channel PowerTrench MOSFET |
| FDS6575 | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDS6576 | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6375 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
| FDS6375_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench MOSFET |
| FDS6375_Q | 功能描述:MOSFET SO-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6570A | 功能描述:MOSFET SO-8 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6572A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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