- 您現在的位置：買賣IC網 > PDF目錄375782 > FDS6299S (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel PowerTrench SyncFET PDF資料下載
參數資料
| 型號： | FDS6299S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 21000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 114K |
| 代理商： | FDS6299S |
July 2005
2005 Fairchild Semiconductor Corporation
FDS6299S Rev C (W)
FDS6299S
30V N
-
Channel PowerTrench
SyncFET
General Description
The FDS6299S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
and low gate charge. The FDS6299S includes
a patented combination of a MOSFET monolithically
integrated with a Schottky diode.
Applications
Synchronous Rectifier for DC/DC Converters –
Notebook Vcore low side switch
Point of load low side switch
Features
21 A, 30 V.
R
DS(ON)
= 3.9 m
@ V
GS
= 10 V
R
DS(ON)
= 5.1 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
High performance trench technology for extremely low
R
DS(ON)
and fast switching
High power and current handling capability
100% R
G
(Gate Resistance) tested
Termination is Lead-free and RoHS Compliant
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
Drain Current – Continuous
I
D
– Pulsed
Power Dissipation for Single Operation
Ratings
30
±
20
21
105
2.5
1.2
1
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
(Note 1)
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDS6299S
FDS6299S
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDS6375 | CONN RCPT .100 100POS DUAL HORZ |
| FDS6570A | Single N-Channel 2.5V Specified PowerTrench MOSFET |
| FDS6572A | 30V N-Channel PowerTrench MOSFET |
| FDS6574A | 30V N-Channel PowerTrench MOSFET |
| FDS6575 | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6299S_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
| FDS6375 | 功能描述:MOSFET SO-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6375 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
| FDS6375_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench MOSFET |
| FDS6375_Q | 功能描述:MOSFET SO-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。