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參數資料
| 型號： | FDS6612A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 8400 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 7/18頁 |
| 文件大?。?/td> | 339K |
| 代理商： | FDS6612A |
LXE1710 E
VALUATION
B
OARD
U
SER
G
UIDE
Microsemi
Linfinity Microelectronics Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 7
Copyright
2000
Rev. 1.1, 2000-12-01
E
LECTRICAL
C
HARACTERISTICS
Unless otherwise specified, the following specifications apply over the operating ambient temperature 0°C<TA<70°C.
For test circuit, see LXE1710 Evaluation Board Schematic diagram.
P
ARAMETER
S
YMBOL
T
EST
C
ONDITIONS
M
IN
.
T
YP
.
M
AX
U
NITS
Supply Voltage LX1710
VDD
7
15
V
Supply Current
IDD
V
=15V, P
O
=38W, R
L
THD+N=1%
V
IN
=15V, No Input
V
=15V, R
10Hz to 22kHz
V
IN
=15V, R
L
10Hz to 22kHz
V
=15V, R
10Hz to 22kHz
V
IN
=15V, f
IN
=1kHz, P
O
=10W
3
A
Quiescent Current
IQ
43
mA
14
W
25
W
Output Power
PO
38
W
82
%
Efficiency
V
IN
=15V, f
IN
=1kHz, P
O
=20W
85
%
f
IN
=1kHz, P
O
=1W
0.05
%
Total Harmonic Distortion Plus
Noise
THD+N
f
IN
=20Hz to 20kHz, PO=1W
0.3
%
Signal-To-Noise Ratio
SNR
V
=15V, V
=1V
RMS
,
10Hz to 10kHz
81
dBV
Power Supply Rejection Ratio
PSRR
-70
dB
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6612A | 制造商:Fairchild Semiconductor Corporation 功能描述:SO8 SINGLE NCH :ROHS COMPLIANT |
| FDS6612A_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel, Logic-Level, PowerTrench MOSFET |
| FDS6612A_D84Z | 功能描述:MOSFET Single N-Ch LL Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6612A_Q | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6614A | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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