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參數資料
| 型號： | FDS6673AZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 Volt P-Channel PowerTrench MOSFET |
| 中文描述： | 14500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 2/5頁 |
| 文件大小： | 130K |
| 代理商： | FDS6673AZ |
2
www.fairchildsemi.com
FDS6673AZ Rev. C(W)
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1. R
θ
θ
JA
JC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
θ
CA
is determined by the user's board design.
R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
T
Drain–Source Breakdown Voltage
V
GS
= –250
= 0 V, I
D
A, Referenced to 25
= –250
μ
A
–30
V
DSS
J
Breakdown Voltage Temperature
Coefficient
I
D
μ
°
C
–25
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= –24 V, V
GS
= 0 V
–1
μ
μ
A
I
GSS
On Characteristics
Gate–Body Leakage
V
GS
= ±20 V, V
DS
= 0 V
±10
A
(Note 2)
V
GS(th)
V
GS(th)
T
Gate Threshold Voltage
V
DS
= –250
= V
GS
, I
D
= –250
μ
A
–1
–1.6
–3
V
J
Gate Threshold Voltage
Temperature Coefficient
I
D
μ
A, Referenced to 25
°
C
5.8
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
V
V
GS
GS
GS
V
DS
= –10 V, I
= –4.5 V, I
= –4.5 V, I
D
D
D
= –14.5 A
= –14.5 A
= –12 A
= –14.5A, T
J
= 125
°
C
6.0
8.8
7.8
7.2
11
10.4
m
g
FS
Forward Transconductance
= –5 V, I
D
50
S
Dynamic Characteristics
C
iss
Input Capacitance
V
f = 1.0 MHz
DS
= –15 V, V
GS
= 0 V,
4480
pF
C
oss
Output Capacitance
1190
pF
C
rss
Reverse Transfer Capacitance
615
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
3.8
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
V
V
DD
GS
= –15 V, I
= –10 V, R
D
= –1 A,
= 6
GEN
22
35
ns
t
r
Turn–On Rise Time
8
16
ns
t
d(off)
Turn–Off Delay Time
134
214
ns
t
f
Turn–Off Fall Time
79
126
ns
Q
g
Total Gate Charge
V
V
DS
GS
= –15 V, I
= –10 V
D
= –14.5 A,
84
118
nC
Q
gs
Gate–Source Charge
12
nC
Q
gd
Gate–Drain Charge
19
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
–2.1
A
V
SD
Drain–Source Diode Forward Voltage
V
GS
= –14.5 A,
/d
t
= 100 A/μs (Note 2)
= 0 V, I
S
= –2.1 A (Note 2)
–0.7
–1.2
V
t
RR
Q
Reverse Recovery Time
I
d
F
iF
44
ns
RR
Reverse Recovery Charge
29
nC
a) 50°C/W (10 sec) 62.5°
C/W steady state when
mounted on a 1 in
of 2 oz copper
pad
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°/W when mounted
on a minimum pad.
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| FDS6673BZ | 功能描述:MOSFET -30V P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6673BZ | 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET -30V 14.5mA 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -30V, 14.5mA |
| FDS6673BZ_F085 | 功能描述:MOSFET -30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6673BZ_G | 制造商:Fairchild 功能描述:-30V P-Channel PowerTrench? MOSFET |
| FDS6675 | 功能描述:MOSFET SO-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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