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參數(shù)資料
| 型號(hào)： | FDS6673AZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 30 Volt P-Channel PowerTrench MOSFET |
| 中文描述： | 14500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 130K |
| 代理商： | FDS6673AZ |
3
www.fairchildsemi.com
FDS6673AZ Rev. C(W)
F
Typical Characteristics
0
20
40
60
80
0
0.5
1
1.5
2
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
= -10V
-3.0V
-3.5V
-6.0V
-4.5V
-4.0V
0.6
1
1.4
1.8
2.2
2.6
3
3.4
3.8
0
20
40
60
80
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= - 3.0V
-6.0V
-4.5V
-10V
-5.0V
-4.0V
-3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
°
C)
R
D
,
I
D
= -14.5A
V
GS
= -10V
0.00
0.01
0.01
0.02
0.02
0.02
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -7.3A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
20
40
60
80
1.5
2
2.5
3
3.5
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
°
C
25
°
C
125
°
·C
V
DS
= -5V
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
= 0V
T
A
= 125
°
C
25
°
C
-55
°
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6673BZ | 功能描述:MOSFET -30V P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6673BZ | 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET -30V 14.5mA 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -30V, 14.5mA |
| FDS6673BZ_F085 | 功能描述:MOSFET -30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6673BZ_G | 制造商:Fairchild 功能描述:-30V P-Channel PowerTrench? MOSFET |
| FDS6675 | 功能描述:MOSFET SO-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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