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參數資料
| 型號： | FDS6680AS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 11500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 551K |
| 代理商： | FDS6680AS |
FDS6680AS Rev B(X)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
T
rr
Diode Reverse Recovery Time
3.5
A
V
GS
= 0 V,
V
GS
= 0 V,
I
F
= 11.5A,
I
S
= 3.5 A
I
S
= 7 A
(Note 2)
(Note 2)
0.5
0.6
18
0.7
V
nS
Q
rr
Diode Reverse Recovery Charge
d
iF
/d
t
= 300 A/μs
(Note 3)
12
nC
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
4.
FDS6680AS_NL is a lead free product. The FDS6680AS_NL marking will appear on the reel label.
F
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| FDS6680 | Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET |
| FDS6680A | Single N-Channel, Logic Level, PowerTrench MOSFET |
| FDS6680S | 30V N-Channel PowerTrench SyncFET⑩ |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6680AS_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDS6680AS_NL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDS6680S | 功能描述:MOSFET SO-8 SGL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6680S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6680S_D84Z | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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