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參數資料
| 型號： | FDS8926A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 201K |
| 代理商： | FDS8926A |
FDS8926A Rev.B
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = 4.5V
2.5V
2.0V
1.5V
3.0V
3.5V
0
5
10
15
20
25
0.8
1
1.2
1.4
1.6
1.8
I , DRAIN CURRENT (A)
D
V = 2.0V
3.5V
4.5V
2.5V
3.0V
R
D
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
1.8
D
V = 4.5 V
I = 5.5 A
R
D
Figure 3. On-Resistance Variation With
Temperature
.
0
0.5
1
1.5
2
2.5
3
0
4
8
12
16
20
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V =5V
T = -55°C
Figure 5 . Transfer Characteristics.
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
20
I
S
A
25°C
-55°C
V = 0V
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
1
2
3
4
5
0
0.025
0.05
0.075
0.1
V , GATE TO SOURCE VOLTAGE (V)
R
D
T = 25°C
I = 2.8A
T = 125°C
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
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PDF描述 |
|---|---|
| FDS8928A | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| FDS8934 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8934A | Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8936S | Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS8936 | Dual N-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS8928A | 功能描述:MOSFET SO-8 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8934 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8934A | 功能描述:MOSFET SO-8 DUAL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8935 | 功能描述:MOSFET -80V Dual P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8936 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
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