- 您現在的位置：買賣IC網 > PDF目錄375785 > FDS8926A (FAIRCHILD SEMICONDUCTOR CORP) Dual N-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數資料
| 型號： | FDS8926A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數： | 4/8頁 |
| 文件大小： | 201K |
| 代理商： | FDS8926A |
FDS8926A Rev.B
0
5
10
15
20
25
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V
G
I = 5.5A
10V
15V
V = 5V
0.1
0.2
0.5
V , DRAI N-SOURCE VOLTAGE (V)
1
2
5
10
20
30
50
0.01
0.03
0.1
0.3
1
3
10
50
I
D
RDS(ON) LIMIT
V = 4.5V
SINGLE PULSE
R =135 °C/W
T = 25°C
A
DC
1s
10ms
100ms
10s
1 100us
0.01
0.1
0.5
1
10
50 100
300
0
5
10
15
20
25
30
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =135° C/W
T = 25°C
θ
JA
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.4
1
2
5
10
30
30
80
200
500
1000
3000
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
GS
C ss
C ss
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area
.
Typical Electrical And Thermal Characteristics
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R =
135
°C/W
T - T = P * R JA
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
相關PDF資料 |
PDF描述 |
|---|---|
| FDS8928A | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| FDS8934 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8934A | Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8936S | Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS8936 | Dual N-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS8928A | 功能描述:MOSFET SO-8 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8934 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8934A | 功能描述:MOSFET SO-8 DUAL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8935 | 功能描述:MOSFET -80V Dual P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8936 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
發布緊急采購，3分鐘左右您將得到回復。