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參數資料
型號: FDS8926A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: SOIC-8
文件頁數: 4/8頁
文件大小: 201K
代理商: FDS8926A
FDS8926A Rev.B
0
5
10
15
20
25
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V
G
I = 5.5A
10V
15V
V = 5V
0.1
0.2
0.5
V , DRAI N-SOURCE VOLTAGE (V)
1
2
5
10
20
30
50
0.01
0.03
0.1
0.3
1
3
10
50
I
D
RDS(ON) LIMIT
V = 4.5V
SINGLE PULSE
R =135 °C/W
T = 25°C
A
DC
1s
10ms
100ms
10s
1 100us
0.01
0.1
0.5
1
10
50 100
300
0
5
10
15
20
25
30
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =135° C/W
T = 25°C
θ
JA
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.4
1
2
5
10
30
30
80
200
500
1000
3000
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
GS
C ss
C ss
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area
.
Typical Electrical And Thermal Characteristics
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R =
135
°C/W
T - T = P * R JA
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
相關PDF資料
PDF描述
FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor
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FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor
FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor
FDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor
相關代理商/技術參數
參數描述
FDS8928A 功能描述:MOSFET SO-8 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8934 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor
FDS8934A 功能描述:MOSFET SO-8 DUAL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8935 功能描述:MOSFET -80V Dual P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS8936 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
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