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參數資料
| 型號： | FDS9936 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強型場效應晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 416K |
| 代理商： | FDS9936 |
May 1998
FDS9936A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These devices
are particularly suited for low voltage applications such as disk
drive motor control, battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDS9936A
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
I
D
Drain Current - Continuous
(Note 1a)
5.5
A
- Pulsed
20
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
FDS9936A Rev.B
5.5 A, 30 V. R
DS(ON)
= 0.040
@ V
GS
= 10 V,
R
DS(ON)
= 0.060
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
S1
D1
S2
G1
SO-8
D2
D2
D1
G2
FDS
9936A
pin
1
1
5
7
8
2
3
4
6
1998 Fairchild Semiconductor Corporation
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PDF描述 |
|---|---|
| FDS9936A | Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS9945 | 60V N-Channel PowerTrench MOSFET |
| FDS9953A | Dual 30V P-Channel PowerTrench MOSFET |
| FDSS2407 | N-Channel Dual MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS9936A | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS9945 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS9945 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 60V 3.5A 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; No. of Pins:8;RoHS Compliant: Yes |
| FDS9945 | 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N CHANNEL MOSFET, 60V, SOIC |
| FDS9945_Q | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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