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參數資料
| 型號： | FDS9936 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強型場效應晶體管 |
| 文件頁數： | 4/8頁 |
| 文件大小： | 416K |
| 代理商： | FDS9936 |
FDS9936A Rev.B
0
2
4
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8
10
12
14
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
I = 5.5A
V = 5V
10V
15V
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.05
0.1
0.5
1
2
5
10
30
50
I
D
RDS(ON)LMT
DC
1s
100ms
10ms
1ms
V =10V
SINGLE PULSE
R = 135°C/W
T = 25°C
JA
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.2
0.5
1
2
5
10
30
30
50
100
200
500
1000
V , DRAIN TO SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0 V
C ss
C s
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area
.
Typical Electrical Characteristics
(continued)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0.01
0.1
0.5
1
10
50 100
300
0
5
10
15
20
25
30
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =135° C/W
T = 25°C
θ
JA
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R =
135
°C/W
T - T = P * R JA
P(pk)
t
1
t
2
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| FDS9936A | Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS9945 | 60V N-Channel PowerTrench MOSFET |
| FDS9953A | Dual 30V P-Channel PowerTrench MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS9936A | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS9945 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS9945 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 60V 3.5A 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; No. of Pins:8;RoHS Compliant: Yes |
| FDS9945 | 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N CHANNEL MOSFET, 60V, SOIC |
| FDS9945_Q | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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