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參數資料
| 型號： | FDU8870 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 21 A, 30 V, 0.0044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | IPAK-3 |
| 文件頁數： | 10/11頁 |
| 文件大小： | 129K |
| 代理商： | FDU8870 |
2004 Fairchild Semiconductor Corporation
FDD8870 / FDU8870 Rev. C
F
PSPICE Thermal Model
REV 23 July 2003
FDD8870T
CTHERM1 TH 6 1e-3
CTHERM2 6 5 2e-3
CTHERM3 5 4 3e-3
CTHERM4 4 3 9e-3
CTHERM5 3 2 1e-2
CTHERM6 2 TL 2e-2
RTHERM1 TH 6 3e-2
RTHERM2 6 5 8e-2
RTHERM3 5 4 1.1e-1
RTHERM4 4 3 1.6e-1
RTHERM5 3 2 1.72e-1
RTHERM6 2 TL 2e-1
SABER Thermal Model
SABER thermal model FDD8870T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =1e-3
ctherm.ctherm2 6 5 =2e-3
ctherm.ctherm3 5 4 =3e-3
ctherm.ctherm4 4 3 =9e-3
ctherm.ctherm5 3 2 =1e-2
ctherm.ctherm6 2 tl =2e-2
rtherm.rtherm1 th 6 =3e-2
rtherm.rtherm2 6 5 =8e-2
rtherm.rtherm3 5 4 =1.1e-1
rtherm.rtherm4 4 3 =1.6e-1
rtherm.rtherm5 3 2 =1.72e-1
rtherm.rtherm6 2 tl =2e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDU8874 | 功能描述:MOSFET 30V 116A 5.1OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU8876 | 功能描述:MOSFET 30V 73A 8.2 OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU8878 | 功能描述:MOSFET 30V N-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU8878_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET 30V, 40A, 15m ohm |
| FDU8880 | 功能描述:MOSFET 30V 58A 10 OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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