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參數(shù)資料
| 型號(hào)： | FDW2504P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 3800 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AA |
| 封裝： | TSSOP-8 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 1427K |
| 代理商： | FDW2504P |
April 2000
PRELIMINARY
1999 Fairchild Semiconductor Corporation
FDW2504P Rev. C (W)
FDW2504P
Dual P-Channel 2.5V Specified PowerTrench
ò
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
Load switch
Motor drive
DC/DC conversion
Power management
Features
–3.8 A, –20 V, R
DS(ON)
= 0.043
@ V
GS
= –4.5 V
R
DS(ON)
= 0.070
@ V
GS
= –2.5V
Extended V
GSS
range (
±
12V) for battery applications
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Ratings
-20
±
12
-3.8
-30
Units
V
V
A
(Note 1a)
P
D
Power Dissipation
(Note 1a)
1.0
0.6
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
125
208
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2504P
FDW2504P
13’’
12mm
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDW2504P_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2504P_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2504P_Q | 功能描述:MOSFET TSSOP-8 P-CH DUAL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW2506 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2506P | 功能描述:MOSFET TSSOP-8 P-CH DUAL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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