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參數資料
| 型號： | FDW2507N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER .56UF 50V 10% X7R 1210 |
| 中文描述： | 7500 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 129K |
| 代理商： | FDW2507N |
March 2003
2003 Fairchild Semiconductor Corporation
FDW2507N Rev C2
FDW2507N
Common Drain N-Channel 2.5V specified PowerTrench
MOSFET
General Description
This monolithic common drain N-Channel MOSFET has
been
designed
using
Fairchild
advanced PowerTrench process to optimize the R
DS(ON)
@ V
= 2.5v on special TSSOP-8 lead frame with all
the drains on one side of the package.
Semiconductor’s
Applications
Li-Ion Battery Pack
Features
7.5 A, 20 V.
R
DS(ON)
= 19 m
@ V
GS
= 4.5 V
R
DS(ON)
= 23 m
@ V
GS
= 2.5 V
Isolated source and drain pins
High performance trench technology for extremely
low R
DS(ON)
@ V
GS
= 2.5 V
Low profile TSSOP-8 package
S1
G1
S2
G2
D
D
D
D
TSSOP-8
Pin 1
5
4
6
3
7
2
8
1
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
7.5
30
1.6
1.1
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
W
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
77
114
°
C/W
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
2507N
FDW2507N
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDW2508 | Dual P-Channel 1.8 V Specified PowerTrench MOSFET |
| FDW2508P | Dual P-Channel 1.8 V Specified PowerTrench MOSFET |
| FDW2509 | Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2509NZ | Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2510NZ | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDW2507N_Q | 功能描述:MOSFET N-Channel 2.5V Common Drain RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW2507NZ | 功能描述:MOSFET 2.5V N-Ch MOSFET Common Drain RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW2508 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel 1.8 V Specified PowerTrench MOSFET |
| FDW2508P | 功能描述:MOSFET 12V/8V PCh MOSFET Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW2508P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL P SMD TSSOP-8 |
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