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參數資料
| 型號： | FDW2508P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual P-Channel 1.8 V Specified PowerTrench MOSFET |
| 中文描述： | 6000 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 135K |
| 代理商： | FDW2508P |
December 2001
2001 Fairchild Semiconductor Corporation
FDW2508P Rev. E (W)
FDW2508P
Dual P-Channel 1.8 V Specified PowerTrench
MOSFET
General Description
This P-Channel –1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Power management
Load switch
Battery protection
Features
–6 A, –12 V. R
DS(ON)
= 18 m
@ V
GS
= –4.5 V
R
DS(ON)
= 22 m
@ V
GS
= –2.5 V
R
DS(ON)
= 30 m
@ V
GS
= –1.8 V
Low gate charge(26nC typical)
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
–12
±
8
–6
–30
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
– Pulsed
P
D
T
J
, T
STG
Power Dissipation for Single Operation
(Note 1a)
1.3
1
W
°
C
Operating and Storage Junction Temperature Range
(Note 1b)
–55 to +150
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
100
125
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
2508P
FDW2508P
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDW2508P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL P SMD TSSOP-8 |
| FDW2508PB | 功能描述:MOSFET -12V Dual P-Ch -1.8VSpecif MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW2509 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2509NZ | 功能描述:MOSFET 2.5V N-Ch MOSFET Common Drain RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW2510NZ | 功能描述:MOSFET 2.5V DUAL NCH SPEC PWR TRCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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