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參數資料
| 型號： | FDW2601NZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 8.2 A, 30 V, 0.015 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁數： | 3/11頁 |
| 文件大小： | 270K |
| 代理商： | FDW2601NZ |
FDW2601NZ Rev. A
www.fairchildsemi.com
F
3
Switching Characteristics
(V
GS
= 4.5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Voltage
t
rr
Reverse Recovery Time
Q
RR
Reverse Recovered Charge
Notes:
1.
R
θ
JA
is 77
o
C/W (steady state) when mounted on a 1 inch
2
copper pad on FR-4
.
2.
R
θ
JA
is 114
o
C/W (steady state) when mounted on a mininum copper pad on FR-4.
3.
The diode connected to the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4.
FDW2601NZ_NL is lead free product. FDW2601NZ_NZ marking will appear on the reel label.
V
DD
= 15V, I
D
= 8.2A
V
GS
= 4.5V, R
GS
= 6.8
-
-
-
-
-
-
-
113
-
-
-
-
210
ns
ns
ns
ns
ns
ns
18
57
69
71
-
I
SD
= 1.3A
I
SD
= 8.2A, dI
SD
/dt = 100A/
μ
s
I
SD
= 8.2A, dI
SD
/dt = 100A/
μ
s
-
-
-
0.7
-
-
1.2
28
17
V
ns
nC
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| FDW2601NZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET |
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| FDW262P | 功能描述:MOSFET 20V PCh MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW262P_Q | 功能描述:MOSFET 20V PCh MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW264P | 功能描述:MOSFET P-Ch 2.5V Spec PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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