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參數資料
| 型號： | FDZ209N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60V N-Channel PowerTrench BGA MOSFET |
| 中文描述： | 4 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-12 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 172K |
| 代理商： | FDZ209N |
May 2004
2004 Fairchild Semiconductor Corporation
FDZ209N Rev B2 (W)
FDZ209N
60V N-Channel PowerTrench BGA MOSFET
General Description
Combining Fairchild
’s advanced PowerTrench process
with state-of-the-art BGA packaging, the FDZ209N
minimizes both PCB space and R
. This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low R
DS(ON)
.
Applications
Solenoid Drivers
Features
4 A, 60 V.
R
DS(ON)
= 80 m
@ V
GS
= 5 V
Occupies only 5 mm
2
of PCB area: only 55% of the
area of SSOT-6
Ultra-thin package: less than 0.80 mm height when
mounted to PCB
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
Ultra-low Q
g
x R
DS(ON)
figure-of-merit
High power and current handling capability
Bottom
Index
slot
Top
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
60
±
20
4
20
2
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JB
Thermal Resistance, Junction-to-Ball
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
64
8
0.7
°
C/W
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
209N
FDZ209N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
Index
slot
G
S
S
S
D
D
D
S
S
D
D
D
F
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| FDZ2552P | Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET |
| FDZ2553NZ | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET |
| FDZ2553N | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench |
| FDZ2554PZ | Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDZ209N_Q | 功能描述:MOSFET 60V/20V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FD-Z20HBW | 制造商:PANASONIC INDUSTRIAL AUTOMATION SALES 功能描述:FIBER FLAT DIFFUSE REFLECT R1 制造商:Panasonic Electric Works 功能描述:SENSOR, FIBRE OPTIC, REFLECTIVE, 85MM, Fiber Optic Sensor Type:Reflective, Sensing Range Max:85mm , RoHS Compliant: Yes 制造商:Panasonic Industrial Devices 功能描述:SENSOR, FIBRE OPTIC, REFLECTIVE, 85MM, Fiber Optic Sensor Type:Reflective, Sensi |
| FD-Z20W | 制造商:Panasonic Industrial Company 功能描述:FIBER DIFFUSE REFLECT FLAT R1 |
| FDZ2551N | 功能描述:MOSFET USE 512-FDZ2553N Common Drain RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2552P | 功能描述:MOSFET 20V/12V NCh MOSFET Common Drain RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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