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參數資料
| 型號： | FDZ2552P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET |
| 中文描述： | 5.5 A, 20 V, 0.045 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-18 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 52K |
| 代理商： | FDZ2552P |
November 1999
ADVANCE INFORMATION
FDZ2552P
Dual P-Channel 2.5V Specified PowerTrench
TM
BGA MOSFET
1999 Fairchild Semiconductor Corporation
FDZ2552P Rev. A (w)
General Description
Combining
PowerTrench process with state of the art BGA
packaging, the FDZ2552P minimizes both PCB space
and R
. This dual BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Fairchild’s
advanced
2.5V
specified
Applications
=
Battery management
=
Load switch
=
Battery protection
Features
=
–6 A, –20 V.
R
DS(ON)
= 0.045
@ V
GS
= –4.5 V
R
DS(ON)
= 0.075
@ V
GS
= –2.5 V.
=
Occupies only 0.10 cm
2
of PCB area.
1/3 the area of SO-8.
=
Ultra-thin package: less than 0.70 mm height when
mounted to PCB.
=
Outstanding thermal transfer characteristics:
significantly better than SO-8.
=
Ultra-low Q
g
x R
DS(ON)
figure-of-merit.
=
High power and current handling capability.
Q2
Q1
Pin 1
G
S
D
D
S
S
S
D
S
S
S
S
G
S
S
D
D
D
Bottom
Pin 1
F
Top
S
S
G
G
D
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
stg
Operating and Storage Junction Temperature Range
Ratings
–20
±
12
–6
-20
3.0
–55 to +175
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
8
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
F2552
FDZ2552P
Reel Size
TBD
Tape width
TBD
Quantity
TBD
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDZ2553N | 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553N_Q | 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553NZ | 功能描述:MOSFET 20V/12V NCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553NZ_Q | 功能描述:MOSFET 20V/12V NCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2554P | 功能描述:MOSFET 20V/12V PCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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