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參數資料
| 型號： | FDZ2552P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET |
| 中文描述： | 5.5 A, 20 V, 0.045 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-18 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 52K |
| 代理商： | FDZ2552P |
FDZ2552P Rev. A (w)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
===
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage Current,
Forward
I
GSSR
Gate–Body Leakage Current,
Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to
25
°
C
V
DS
= –16 V,
V
GS
= –12 V,
–20
V
Breakdown Voltage Temperature
28
mV/
°
C
V
GS
= 0 V
V
DS
= 0 V
–1
–100
μ
A
nA
V
GS
= 12 V
V
DS
= 0 V
100
nA
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
V
GS
= –4.5 V,
V
GS
= –2.5 V,
–0.4
–0.9
0.036
0.060
–1.5
0.045
0.075
V
I
D
= –6 A
I
D
= –4.5 A
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–2.5
–1.2
A
V
V
GS
= 0 V,
I
S
= –2.5 A
(Note 2)
–0.77
Notes:
1.
R
is a function of the junction-to-case (R
θ
JC
), case-to-ambient (R
) and the PC Board (R
) thermal resistance where the case thermal reference is
defined the top surface of the package. R
θ
JC
is guaranteed by design while R
θ
CA
and R
θ
BA
are determined by the user's design. Maximum current ratings
assume single device operation.
(a).
R
θ
JA
= 50
°
C/W (steady-state) when mounted on 1 in
2
of 2 oz. copper.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關代理商/技術參數 |
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|---|---|
| FDZ2553N | 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553N_Q | 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553NZ | 功能描述:MOSFET 20V/12V NCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553NZ_Q | 功能描述:MOSFET 20V/12V NCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2554P | 功能描述:MOSFET 20V/12V PCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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