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參數資料
型號: FGB40N6S2
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:5A; Power Supply Mounting:Chassis; Output Current:5A; Output Power Max:240W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes
中文描述: 75 A, 600 V, N-CHANNEL IGBT, TO-263AB
封裝: D2PAK-3
文件頁數: 3/8頁
文件大小: 176K
代理商: FGB40N6S2
2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
F
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
10
0
20
25
75
100
125
150
90
40
60
30
50
PACKAGE LIMITED
80
70
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
I
C
,
300
400
200
100
500
600
0
50
75
25
125
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 100
μ
H
100
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
100
60
10
30
1000
10
T
J
= 125
o
C, R
G
= 3
, L = 200
μ
H, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
θ
JC
= 0.27
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C =
75
o
C
V
GE
= 10V
V
GE
= 15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
9
11
12
15
9
5
300
500
t
SC
I
SC
450
13
14
11
13
7
250
350
400
10
16
3
V
CE
= 390V, R
G
= 3
, T
J
= 125
o
C
0.0
0.4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
5
10
0.6
1.2
1.4
20
15
40
T
J
= 25
o
C
0.2
25
0.8
1.0
T
J
= 125
o
C
T
J
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
=10V
PULSE DURATION = 250
μ
s
35
30
1.6
1.8
2.0
2.2
2.4
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
=15V
PULSE DURATION = 250
μ
s
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
0
5
10
20
15
40
25
35
30
0.0
0.4
0.6
1.2
1.4
0.2
0.8
1.0
1.6
1.8
2.0
2.2
2.4
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相關代理商/技術參數
參數描述
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