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參數資料
| 型號： | FGB40N6S2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:5A; Power Supply Mounting:Chassis; Output Current:5A; Output Power Max:240W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數： | 5/8頁 |
| 文件大小： | 176K |
| 代理商： | FGB40N6S2 |
2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
F
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
I
C
,
0
25
50
5
6
7
8
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
9
75
150
175
3
125
100
200
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
TJ = -55
o
C
TJ = 25
o
C
TJ = 125
o
C
4
11
10
V
G
,
Q
G
, GATE CHARGE (nC)
2
10
0
6
I
G(REF)
= 1mA, R
L
= 15
V
CE
= 200V
4
8
12
V
CE
= 600V
5
10
15
20
0
V
CE
= 400V
14
16
25
30
35
I
CE
= 10A
0
1.2
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
1.6
125
25
150
2.4
E
T
,
2.0
I
CE
= 40A
I
CE
= 20A
0.8
0.4
E
TOTAL
= E
ON2
+ E
OFF
R
G
= 3
, L = 200
μ
H, V
CE
= 390V, V
GE
= 15V
0.1
10
100
R
G
, GATE RESISTANCE (
)
1.0
1000
E
T
,
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 10A
I
CE
= 20A
I
CE
= 40A
T
J
= 125
o
C, L = 200
μ
H, V
CE
= 390V, V
GE
= 15V
100
10
1
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
20
40
0.0
1.0
3.0
2.5
FREQUENCY = 1MHz
C
OES
C
IES
60
80
100
0.5
1.5
2.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
1.6
9
2.0
2.8
2.4
8
10
11
12
16
3.2
V
C
,
I
CE
= 40A
PULSE DURATION = 250
μ
s
3.6
7
13
14
15
DUTY CYCLE < 0.5%
4.0
I
CE
= 10A
I
CE
= 20A
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