欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FGB40N6S2
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:5A; Power Supply Mounting:Chassis; Output Current:5A; Output Power Max:240W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes
中文描述: 75 A, 600 V, N-CHANNEL IGBT, TO-263AB
封裝: D2PAK-3
文件頁數: 4/8頁
文件大小: 176K
代理商: FGB40N6S2
2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
F
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
E
O
,
μ
J
600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
400
800
0
10
20
25
30
35
40
0
1200
1000
200
1400
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
5
15
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
600
400
800
0
1000
1400
200
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
10
20
25
30
35
40
0
5
15
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
0
4
8
12
16
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
20
10
20
25
30
35
40
0
5
15
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
30
10
60
50
40
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
=15V
20
10
20
25
30
35
40
0
5
15
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
40
20
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
70
60
50
V
GE
= 10V, V
GE
= 15V, T
J
= 125
o
C
80
10
20
25
30
35
40
0
5
15
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
V
GE
= 10V, V
GE
= 15V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
10
20
25
30
35
40
0
5
15
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
60
40
50
90
80
70
100
相關PDF資料
PDF描述
FGH50N3 300V, PT N-Channel IGBT
FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGH50N6S2 600V, SMPS II Series N-Channel IGBT
FGH60N6S2 600V, SMPS II Series N-Channel IGBT
FGK60N6S2D INDUSTRIAL POWER SUPPLY, 85-265VAC/120-330VDC INPUT, 24V@14A RoHS Compliant: Yes
相關代理商/技術參數
參數描述
FGB40N6S2T 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS II Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGB5N60UNDF 功能描述:IGBT 晶體管 600V 5A NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGB7N60UNDF 功能描述:IGBT 晶體管 600V 7A NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGBK 功能描述:按鈕開關 Pushbutton RoHS:否 制造商:C&K Components 觸點形式:2 NC - 2 NO 開關功能:ON ? OFF 電流額定值:4 A 電壓額定值 AC:12 V to 250 V 電壓額定值 DC:12 V to 50 V 功率額定值: 安裝風格:Through Hole 照明:Illuminated 照明顏色:None IP 等級:IP 40 端接類型:Solder 觸點電鍍:Silver 執行器:Square 蓋顏色: 封裝: 可燃性等級:UL 94 V-0
FG-BTS 制造商:EATON MOELLER 功能描述:SHROUD BUSBAR FGA/B
主站蜘蛛池模板: 西峡县| 丰城市| 安化县| 垦利县| 息烽县| 乐都县| 交城县| 双辽市| 辽阳县| 盐池县| 井研县| 招远市| 民丰县| 和田县| 黄浦区| 阿图什市| 嘉善县| 昂仁县| 永定县| 内江市| 喀喇| 逊克县| 阳谷县| 托里县| 沽源县| 临海市| 浮梁县| 新泰市| 新宾| 青河县| 宁陕县| 韩城市| 当雄县| 康乐县| 伽师县| 柳州市| 太康县| 鄂尔多斯市| 邛崃市| 法库县| 新源县|