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參數資料
| 型號： | FGD3N60LSDTF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT |
| 封裝： | D-PAK, 3 PIN |
| 文件頁數： | 4/8頁 |
| 文件大小： | 848K |
| 代理商： | FGD3N60LSDTF |
4
www.fairchildsemi.com
FGD3N60LSD Rev. A
F
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Output Characteristics
Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. Case
Figure 6. Capacitance Characteristics
0
2
4
6
8
0
6
12
18
24
30
20V
15V
10V
V
GE
= 8V
Common Emitter
T
C
= 25
°
C
C
C
Collector-Emitter Voltage, V
CE
[V]
0
2
Collector-Emitter Voltage, V
CE
[V]
4
6
8
0
6
12
18
24
30
Common Emitter
T
C
= 125
°
C
V
GE
= 8V
20V
15V
10V
C
C
1
10
0
2
4
6
8
10
C
C
Common Emitter
V
CE
= 20V
T
C
= 25
°
C
T
C
= 125
°
C
Gate-Emitter Voltage, V
GE
[V]
0.1
1
10
0
2
4
6
8
10
Collector-Emitter Voltage, V
CE
[V]
C
C
Common Emitter
V
GE
= 10V
T
C
= 25
°
C
T
C
= 125
°
C
0
30
60
90
120
150
0
1
2
3
I
C
= 6A
I
C
= 3A
I
C
= 1.5A
Common Emitter
V
GE
= 10V
C
C
Case Temperature, T
C
[
°
C]
1
10
0
100
200
300
400
500
600
Cres
Coes
Cies
Collector - Emitter Voltage, V
CE
[V]
C
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
°
C
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相關代理商/技術參數 |
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| FGD3N60LSDTM | 功能描述:IGBT 晶體管 600V IGBT HID Application RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGD3N60UNDF | 功能描述:IGBT 晶體管 600V, 3A Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGD4536 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:360V, PDP IGBT |
| FGD4536TM | 功能描述:IGBT 晶體管 360V PDP IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGD4536TM_F065 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 360V 125W DPAK |
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