- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375795 > FGD3N60LSDTF (FAIRCHILD SEMICONDUCTOR CORP) IGBT PDF資料下載
參數(shù)資料
| 型號： | FGD3N60LSDTF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT |
| 封裝： | D-PAK, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 848K |
| 代理商： | FGD3N60LSDTF |
6
www.fairchildsemi.com
FGD3N60LSD Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Forward Characteristics
Figure 15. Forward Voltage Drop Vs Tj
Figure 16. SOA Characteristics
Figure 17. Transient Thermal Impedance of IGBT
0
1
2
3
4
0.1
1
10
100
F
F
[
Forward Voltage Drop, V
F
[V]
Tc = 25
°
C
Tc = 100
°
C
2
4
100
1000
Eon
Eoff
S
μ
J
Collector Curre3
C
[A]
Common Emitter
Vcc = 480 V, V
GE
= 10V
R
G
= 470
T
C
= 25
°
C
T
C
= 125
°
C
25
50
75
100
125
1.2
1.6
2.0
2.4
2.8
I
F
=3 A
I
F
=6 A
F
F
Junction Temperature, Tj [
°
C]
I
F
=1.5 A
0.1
1
10
100
1000
0.01
0.1
1
10
100
50
μ
s
100
μ
s
1ms
DC Operation
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse Tc = 25
°
C
Curves must be derated
linearly with increase
in temperature
C
Collector - Emitter Voltage, V
CE
[V]
1E-5
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
T
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
相關PDF資料 |
PDF描述 |
|---|---|
| FGD3N60LSDTM | IGBT |
| FGH20N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGB20N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGP20N6S2D | Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes |
| FGB20N6S2DT | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FGD3N60LSDTM | 功能描述:IGBT 晶體管 600V IGBT HID Application RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGD3N60UNDF | 功能描述:IGBT 晶體管 600V, 3A Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGD4536 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:360V, PDP IGBT |
| FGD4536TM | 功能描述:IGBT 晶體管 360V PDP IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGD4536TM_F065 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 360V 125W DPAK |
發(fā)布緊急采購，3分鐘左右您將得到回復。