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參數(shù)資料
| 型號： | FGH50N3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 300V, PT N-Channel IGBT |
| 中文描述： | 75 A, 300 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 183K |
| 代理商： | FGH50N3 |
2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25
°
C unless otherwise noted
Off State Characteristics
BV
CES
Collector to Emitter Breakdown Voltage I
CE
= 250
μ
A, V
GE
= 0V
BV
ECS
Emitter to Collector Breakdown Voltage I
EC
= 10mA, V
GE
= 0V
I
CES
Collector to Emitter Leakage Current
On State Characteristics
V
CE(SAT)
Collector to Emitter Saturation Voltage I
CE
= 30A
Dynamic Characteristics
Q
G(ON)
Gate Charge
Switching Characteristics
SSOA
Switching SOA
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction-Case
Device Marking
FGH50N3
Device
FGH50N3
Package
TO-247
Tape Width
N/A
Quantity
30
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
300V
15V
-
-
-
-
-
-
-
-
-
-
V
V
μ
A
mA
nA
V
CE
= 300V
T
J
= 25
°
C
T
J
= 125
°
C
250
2.0
±250
I
GES
Gate to Emitter Leakage Current
V
GE
= ± 20V
V
GE
= 15V
T
J
= 25
°
C
T
J
= 125
°
C
-
-
1.30
1.25
1.4
1.4
V
V
I
CE
= 30A
V
CE
= 150V
I
CE
= 250
μ
A, V
CE
= V
GE
I
CE
= 30A, V
CE
= 150V
V
GE
= 15V
V
GE
= 20V
-
-
180
228
4.8
7.0
-
-
nC
nC
V
V
V
GE(TH)
V
GEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
4.0
-
5.5
-
T
J
= 150
°
C, R
G
= 5
,
V
GE
= 15V , L = 25
μ
H,
Vce = 300V
IGBT and Diode at T
J
= 25
°
C,
I
CE
= 30A,
V
CE
= 180V,
V
GE
= 15V,
R
G
= 5
,
L = 100
μ
H,
Test Circuit - Figure 20
IGBT and Diode at T
J
= 125
°
C,
I
CE
= 30A,
V
CE
= 180V,
V
GE
= 15V,
R
G
= 5
,
L = 100
μ
H,
Test Circuit - Figure 20
150
-
-
A
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON2
E
OFF
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
-
-
-
-
-
-
-
-
-
-
-
-
20
15
135
12
130
92
19
13
155
7
225
135
-
-
-
-
-
ns
ns
ns
ns
μ
J
μ
J
ns
ns
ns
ns
μ
J
μ
J
120
-
-
190
15
270
200
TO-247
-
-
0.27
°
C/W
NOTE:
E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT.
The diode type is specified in figure 20.
Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I
= 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FGH50N3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50N6S2 | 功能描述:IGBT 晶體管 Sgl 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH50N6S2D | 功能描述:IGBT 晶體管 Comp 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH50N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50T65UPD | 功能描述:IGBT 晶體管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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