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參數資料
| 型號： | FGL40N120AND |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 1200V NPT IGBT |
| 中文描述： | 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 492K |
| 代理商： | FGL40N120AND |
2005 Fairchild Semiconductor Corporation
FGL40N120AND Rev. A
1
www.fairchildsemi.com
F
February 2005
FGL40N120AND
1200V NPT IGBT
Features
High speed switching
Low saturation voltage : V
CE(sat)
= 2.6 V @ I
C
= 40A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 75ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.
Description
Employing NPT technology, Fairchild’s AND series of IGBTs
provides low conduction and switching losses. The AND series
offers an solution for application such as induction heating (IH),
motor control, general purpose inverters and uninterruptible
power supplies (UPS).
Absolute Maximum Ratings
Notes:
(1) Pulse width limited by max. junction temperature
Thermal Characteristics
G
C
E
G
C
E
TO-264
Symbol
Parameter
FGL40N120AND
Units
V
CES
V
GES
Collector-Emitter Voltage
1200
V
Gate-Emitter Voltage
±25
V
I
C
Collector Current
@T
C
= 25
°
C
@T
C
= 100
°
C
64
A
Collector Current
40
A
I
CM(1)
I
F
I
FM
Pulsed Collector Current
120
A
Diode Continuous Forward Current
@T
C
= 100
°
C
40
A
Diode Maximum Forward Current
240
A
P
D
Maximum Power Dissipation
@T
C
= 25
°
C
@T
C
= 100
°
C
500
W
Maximum Power Dissipation
200
W
SCWT
Short Circuit Withstand Time,
V
CE
= 600V, V
GE
= 15V, T
C
= 125
°
C
Operating Junction Temperature
10
μ
s
T
J
T
STG
-55 to +150
°
C
°
C
Storage Temperature Range
-55 to +150
T
L
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds
300
°
C
Symbol
Parameter
Typ.
Max.
Units
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.25
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction-to-Case
--
0.7
Thermal Resistance, Junction-to-Ambient
--
25
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FGL40N120AND_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT IGBT |
| FGL40N120ANDTU | 功能描述:IGBT 晶體管 1200V NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGL40N120ANDTU | 制造商:Fairchild Semiconductor Corporation 功能描述:SINGLE IGBT 1.2KV 64A |
| FGL40N120ANTU | 功能描述:IGBT 晶體管 1200V NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGL40N150 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Electrical Characteristics of the IGBT |
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