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參數資料
| 型號： | FGL40N150 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Electrical Characteristics of the IGBT |
| 中文描述： | 電氣特性IGBT的 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 440K |
| 代理商： | FGL40N150 |
2002 Fairchild Semiconductor Corporation
FGL40N150D Rev. A1
IGBT
F
FGL40N150D
General Description
Fairchild’s Insulated Gate Bipolar Transistor
(
IGBT)
provides low conduction and switching losses.
The FGL40N150D is designed for induction heating
applications.
Features
High speed switching
Low saturation voltage : V
CE(sat)
= 3.5 V @ I
C
= 40A
High input impedance
Built-in fast recovery diode
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
FGL40N150D
1500
±
25
40
20
120
10
100
200
80
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
I
F
I
FM
P
D
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
JA
Parameter
Typ.
--
--
--
Max.
0.625
0.83
25
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.
G
C
E
TO-264
G
C
E
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FGL40N150D | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Electrical Characteristics of the IGBT |
| FGL40N150DTU | 功能描述:IGBT 晶體管 1500V/40A/FRD RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGL40N60UFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述: |
| FGL60N100BNTD | 功能描述:IGBT 晶體管 HIGH_POWER RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGL60N100BNTDTU | 功能描述:IGBT 晶體管 HIGH_POWER RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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