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參數(shù)資料
| 型號(hào)： | FGL60N100D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Electrical Characteristics of IGBT |
| 中文描述： | 60 A, 1000 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 438K |
| 代理商： | FGL60N100D |
2002 Fairchild Semiconductor Corporation
FGL60N100D Rev. A
IGBT
F
FGL60N100D
General Description
Insulated Gate Bipolar Transistors (IGBTs) with trench gate
structure have superior performance in conduction and
switching to planar gate structure, and also have wide noise
immunity. These devices are well suitable for IH
applications
Features
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.5V @ I
C
= 60A
High Input Impedance
Built-in Fast Recovery Diode
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
FGL60N100D
1000
±
25
60
42
120
15
176
70
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
I
F
P
D
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
JA
Parameter
Typ.
--
--
--
Max.
0.71
2.08
25
Units
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Application
Home Appliance, Induction Heater, IH JAR, Micro Wave Oven
G
C
E
TO-264
G
C
E
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FGL60N100DTU | 功能描述:IGBT 晶體管 60A 1000V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGL60N170D | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Electrical Characteristics of IGBT |
| FGL60N170DTU | 功能描述:IGBT 晶體管 Copak Discrete IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGLD12SR6040A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4.5-14.4Vdc Input, 40A, 0.45-2.0Vdc Output |
| FGLD12SR6040NA | 制造商:FDK America 功能描述:DC/DC CONVERTER 0.6-2V 40A 80W |
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