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參數資料
| 型號： | FGH50N3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 300V, PT N-Channel IGBT |
| 中文描述： | 75 A, 300 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 5/8頁 |
| 文件大小： | 183K |
| 代理商： | FGH50N3 |
2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A
F
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted (Continued)
I
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
J
= 125
o
C
T
J
= -55
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 25
o
C
5
6
7
8
9
10
11
0
50
100
150
200
250
V
G
,
Q
G
, GATE CHARGE (nC)
I
G(REF)
= 1mA, R
L
= 5
, T
J
= 25
o
C
V
CE
= 100V
V
CE
= 300V
V
CE
= 200V
25
50
75
100
125
200
0
150
175
0
2
4
6
8
10
12
14
16
T
C
, CASE TEMPERATURE (
o
C)
E
T
,
m
J
R
G
= 5
, L = 100
μ
H, V
CE
= 180V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 60A
I
CE
= 30A
I
CE
= 15A
0
0.2
0.4
0.8
0.6
1.2
1.0
50
25
75
100
125
150
R
G
, GATE RESISTANCE (
)
E
T
,
m
J
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 100
μ
H, V
CE
= 180V, V
GE
= 15V
1
0.1
40
10
1
10
100
1000
I
CE
= 60A
I
CE
= 30A
I
CE
= 15A
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
10
20
30
40
50
FREQUENCY = 1MHz
C
OES
C
IES
60
70
80
90
100
0.05
10
1.0
0.1
V
GE
, GATE TO EMITTER VOLTAGE (V)
9
8
10
11
12
16
V
C
,
PULSE DURATION = 250
μ
s, T
J
= 25
o
C
7
13
14
15
DUTY CYCLE < 0.5%
I
CE
= 60A
6
I
CE
= 15A
I
CE
= 30A
1.0
1.5
2.0
2.5
3.0
3.5
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FGH50N3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50N6S2 | 功能描述:IGBT 晶體管 Sgl 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH50N6S2D | 功能描述:IGBT 晶體管 Comp 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH50N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50T65UPD | 功能描述:IGBT 晶體管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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