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參數資料
型號: FGH50N6S2
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: 600V, SMPS II Series N-Channel IGBT
中文描述: 75 A, 600 V, N-CHANNEL IGBT, TO-247
封裝: TO-247, 3 PIN
文件頁數: 2/8頁
文件大小: 173K
代理商: FGH50N6S2
2003 Fairchild Semiconductor Corporation
FGH50N6S2 RevA3
F
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25
°
C unless otherwise noted
Off State Characteristics
BV
CES
Collector to Emitter Breakdown Voltage I
C
= 250
μ
A, V
GE
= 0
BV
ECS
Emitter to Collector Breakdown Voltage I
C
= -10mA, V
GE
= 0
I
CES
Collector to Emitter Leakage Current
On State Characteristics
V
CE(SAT)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Q
G(ON)
Gate Charge
Switching Characteristics
SSOA
Switching SOA
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction-Case
Device Marking
50N6S2
Device
FGH50N6S2
Package
TO-247
Reel Size
Tube
Tape Width
N/A
Quantity
30
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
600
20
-
-
-
-
-
-
-
-
-
-
V
V
μ
A
mA
nA
V
CE
= 600V
T
J
= 25
°
C
T
J
= 125
°
C
250
2.8
±250
I
GES
Gate to Emitter Leakage Current
V
GE
= ± 20V
I
C
= 30A,
V
GE
= 15V
I
EC
= 30A
T
J
= 25
°
C
T
J
= 125
°
C
-
-
-
1.9
1.7
2.2
2.7
2.2
2.6
V
V
V
V
EC
Diode Forward Voltage
I
C
= 30A,
V
CE
= 300V
I
C
= 250
μ
A, V
CE
= V
GE
I
C
= 30A, V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
-
-
70
90
4.3
6.5
85
110
5.0
8.0
nC
nC
V
V
V
GE(TH)
V
GEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
3.5
-
T
J
= 150
°
C, V
GE
= 15V, R
G
= 3
L = 100
μ
H, V
CE
= 600V
IGBT and Diode at T
J
= 25
°
C,
I
CE
= 30A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3
L = 200
μ
H
Test Circuit - Figure 26
150
-
-
A
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13
15
55
50
260
330
250
13
15
92
88
260
490
575
-
-
-
-
-
-
ns
ns
ns
ns
μ
J
μ
J
μ
J
ns
ns
ns
ns
μ
J
μ
J
μ
J
350
-
-
150
100
-
600
850
IGBT and Diode at T
J
= 125
°
C
I
CE
= 30A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3
L = 200
μ
H
Test Circuit - Figure 26
IGBT
-
-
0.27
°
C/W
NOTE:
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss
of the IGBT only. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in figure 26.
Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I
= 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
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相關代理商/技術參數
參數描述
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