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參數資料
| 型號： | FGL40N150D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Electrical Characteristics of the IGBT |
| 中文描述： | 40 A, 1500 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數： | 4/7頁 |
| 文件大小： | 440K |
| 代理商： | FGL40N150D |
FGL40N150D Rev. A1
F
2002 Fairchild Semiconductor Corporation
Fig 7. Turn-Off Characteristics vs.
Collector Current
Fig 8. Turn-On Characteristics vs.
Collector Current
Fig 9. Switching Loss vs. Collector Current
Fig 10. Turn-Off Characteristics vs.
Gate Resistance
Fig 11. Turn-On Characteristics vs.
Gate Resistance
Fig 12. Switching Loss vs. Gate Resistance
10
20
30
40
50
60
70
80
90
100
1000
Common Emitter
V
GE
=
±
15V, R
G
= 51
T
C
= 25
T
C
= 125
o
C
o
C
tf
td(off)
S
Collector Current, I
C
[A]
10
20
30
40
50
60
70
80
90
10
100
1000
Common Emitter
V
GE
=
±
15V, R
G
= 51
T
C
= 25
T
C
= 125
o
C
o
C
tr
td(on)
S
Collector Current, I
C
[A]
10
20
30
40
50
60
70
80
90
100
1000
10000
Eon
Common Emitter
V
GE
=
±
15V, R
G
= 51
T
C
= 25
T
C
= 125
o
C
o
C
Eoff
S
μ
J
Collector Current, I
C
[A]
10
100
100
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25
T
C
= 125
o
C
o
C
tf
td(off)
S
Gate Resistance, R
G
[
]
10
100
10
100
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25
T
C
= 125
o
C
o
C
tr
td(on)
S
Gate Resistance, R
G
[
]
10
100
1000
10000
Common Emitter
V
= 600V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25
T
C
= 125
o
C
o
C
Eon
Eoff
S
μ
J
Gate Resistance, R
G
[
]
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