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參數資料
| 型號： | FJH1102 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Ultra Low Leakage Diode |
| 中文描述： | 0.15 A, SILICON, SIGNAL DIODE, DO-35 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 121K |
| 代理商： | FJH1102 |
FJH1102
1999 Fairchild Semiconductor Corporation
FJH1102 - Rev. A
General Description:
An Ultra Low Leakage Diode in the DO-35 package.
The forward voltage is typically greater than 0.5 volts
at 1.0 micro-ampere.
This product is light sensitive, any damage to the body
coating will affect the reverse leakage when exposed to
light.
Ultra Low Leakage Diode
Absolute Maximum Ratings*
TA = 25
O
C unless otherwise noted
Sym
Parameter
Value
Units
T
stg
T
J
P
D
Storage Temperature
-55 to +200
O
C
Operating Junction Temperature
175
O
C
Total Power Dissipation at T
A
= 25
O
C
250
mW
Linear Derating Factor from T
A
= 25
O
C
Thermal Resistance Junction-to-Ambient
1.67
mW/
O
C
R
OJA
W
iv
I
F
300
O
C/W
Working Inverse Voltage
25
V
DC Forward Current (I
F
)
150
mA
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
CATHODE
BAND
0.200 (5.08)
0.120 (3.05)
0.022 (0.558)
Diameter
0.018 (0.458)
Typ 20 mils
0.090 (2.28)
Diameter
0.060 (1.53)
0.500
Minimum
12.70
Typ 1.000
LOGO
FJH
11
02
Electrical Characteristics
TA = 25
O
C unless otherwise noted
SYM
CHARACTERISTICS
MIN
MAX
UNITS
TEST CONDITIONS
B
V
I
R
V
F
Breakdown Voltage
30
V
I
R
V
R
=
I
F
I
F
I
F
I
F
V
R
=
=
5.0 uA
Reverse Leakage
100
pA
25 V
Forward Voltage
500
650
750
600
750
850
1.10
mV
mV
mV
V
=
=
=
=
1.0 uA
100 uA
1.0 mA
10 mA
C
T
Diode Capacitance
3.5
pF
0 V, f = 1.0 MHz
Information Only Data Sheet
FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY
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