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參數資料
| 型號： | FJP5304D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage High Speed Power Switch Application |
| 中文描述： | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 79K |
| 代理商： | FJP5304D |
2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
F
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
* Collector Current (Pulse)
I
B
Base Current (DC)
I
BP
* Base Current (Pulse)
P
C
Collector Dissipation (T
C
=25
°
C)
T
STG
Storage Temperature
* Pulse Test Pulse Width = 5ms, Duty Cycle
≥
1.0%
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CES
Collector Cut-off Current
I
CEO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
Parameter
Value
700
400
12
4
8
2
4
70
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
°
C
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
V
CE
= 700V, V
EB
= 0
V
CE
= 400V, IB = 0
V
EB
= 12V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 2A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.2A
I
C
= 2.5A, I
B
= 0.5A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.2A
I
C
= 2.5A, I
B
= 0.5A
I
F
= 2A
Min.
700
400
12
Typ.
Max.
Units
V
V
V
mA
mA
mA
100
250
100
10
8
40
0.7
1.0
1.5
1.1
1.2
1.3
2.5
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
V
BE
(sat)
Base-Emitter Saturation Voltage
V
V
f
Internal Diode Forward Voltage Drop
V
FJP5304D
High Voltage High Speed Power Switch
Application
Wide Safe Operating Area
Built-in Free Wheeling diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
1.Base 2.Collector 3.Emitter
1
TO-220
C
B
E
Equivalent Circuit
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FJP5304D_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Transistor |
| FJP5304DTU | 功能描述:兩極晶體管 - BJT NPN Triple Diffused Planar Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJP5321 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage and High Reliability |
| FJP5321TU | 功能描述:兩極晶體管 - BJT NPN 800V/5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJP5355 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage Switch Mode Application |
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