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參數資料
| 型號： | FJP5355 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Switch Mode Application |
| 中文描述： | 5 A, 440 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 70K |
| 代理商： | FJP5355 |
2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
F
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter- Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector- Base Breakdown Voltage
BV
CEO
Collector- Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
EBO
Emitter Cut-off Current
h
FE
*DC Current Gain
* Pulse test: PW
≤
300
μ
s, Duty cycle
≤
2%
Parameter
Value
900
440
14.5
5
7.5
2.5
50
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°
C
°
C
Test Condition
I
C
= 500
μ
A, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 500
μ
A, I
C
= 0
V
EB
= 12V, I
C
= 0
V
CE
= 2V, I
C
= 10mA
V
CE
= 2V, I
C
= 0.8A
V
CE
= 2V, I
C
= 2.5A
I
C
= 0.8A, I
B
= 0.2A
I
C
= 2.5A, I
B
= 0.8A
I
C
= 0.8A, I
B
= 0.2A
I
C
= 2.5A, I
B
= 0.8A
V
CE
= 10V, I
C
= 0.2A
V
CC
= 125V, I
C
= 0.5A
I
B1
= 45mA, -I
B2
= 0.5A
PW=300
μ
s
Min.
900
440
14.5
Typ.
Max.
1
Units
V
V
V
μ
A
15
15
7
V
CE
(sat)
*Collector-Emitter Saturation Voltage
0.2
0.4
1.0
1.2
V
V
V
V
V
BE
(sat)
*Base-Emitter Saturation Voltage
f
T
t
ON
t
STG
t
F
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
4
MHz
μ
s
μ
s
μ
s
1.1
1.2
0.4
FJP5355
High Voltage Switch Mode Application
High Speed Switching
Very Low Switching Losses
Very Low Operating Temperature
Wide RBSOA
1.Base 2.Collector 3.Emitter
1
TO-220
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FJP5355TU | 功能描述:兩極晶體管 - BJT NPN Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJP5554 | 功能描述:兩極晶體管 - BJT HI-VLTG FAST SWITCH TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJP5554TU | 功能描述:兩極晶體管 - BJT NPN 40V/5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJP5555 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Transistor |
| FJP5555_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Transistor |
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