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參數資料
| 型號： | FJPF3305 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Switch Mode Application |
| 中文描述： | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 80K |
| 代理商： | FJPF3305 |
2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
F
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE1
h
FE2
V
CE
(sat)
Collector-Emitter Saturation Voltage
* Pulse test: PW
≤
300
μ
s, Duty Cycle
≤
2%
h
FE
Classification
Parameter
Value
700
400
9
4
8
2
30
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°
C
°
C
Test Condition
I
C
=500
μ
A, I
E
=0
I
C
=5mA, I
B
=
0
I
E
=500
μ
A, I
C
=0
V
CB
=700V, I
E
=0
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=2A
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
I
C
=4A, I
B
=1A
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
V
CE
=5V, I
C
=1A
V
CB
=10V, f=1MHz
V
CC
=125V,
I
C
=2A=5I
B1
=-5I
B2
R
L
=62.5
Min.
700
400
9
Typ.
Max.
Units
V
V
V
μ
A
μ
A
1
1
*
DC Current Gain
19
8
35
40
0.5
0.6
1
1.2
1.6
V
V
V
V
V
V
BE
(sat)
Base-Emitter On Voltage
f
T
C
ob
t
ON
t
STG
t
F
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
4
MHz
pF
μ
s
μ
s
μ
s
65
0.8
4
0.9
Classification
h
FE2
R
O
19 ~ 28
26 ~ 35
FJPF3305
High Voltage Switch Mode Application
High Speed Switching
Suitable for Electronic Ballast and Switching Regulator
1
1.Base 2.Collector 3.Emitter
TO-220F
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| FJPF3305H1TU | 功能描述:兩極晶體管 - BJT NPN Silicon Trans RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJPF3305H2TU | 功能描述:兩極晶體管 - BJT NPN 7 0V/4A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJPF3305TU | 功能描述:兩極晶體管 - BJT NPN 700V/4A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJPF3835 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Power Amplifier |
| FJPF5021 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage and High Reliability |
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