
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
-
1200
1800
-
600
-
-1.0
-2.0
-3.5
-5
-
-
10.5
11.5
-
-
46
-
34.5
35.5
-
VDS = 5V, IDS = 60mA
VDS = 5V, IDS = 800mA
VDS = 5V, VGS = 0V
IGS = -60
μ
A
Channel to Case
VDS = 10V
IDS
≈
0.6IDSS (Typ.),
f = 2.3GHz
mA
mS
V
dB
%
dBm
V
Vp
VGSO
P1dB
G1dB
η
add
Thermal Resistance
-
7.5
10
°
C/W
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
G.C.P.: Gain Compression Point
CASE STYLE:
ME
1
Edition 1.1
July 1999
FLL357ME
L-Band Medium & High Power GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
15
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
Ptot
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 19.4 and -2.0 mA respectively with
gate resistance of 100
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
FEATURES
High Output Power: P1dB=35.5dBm (Typ.)
High Gain: G1dB=11.5dB (Typ.)
High PAE:
η
add=46% (Typ.)
Proven Reliability
Hermetically Sealed Package
DESCRIPTION
The FLL357ME is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ideally suited
for base station applications. This device is assembled in hermetic
metal/ceramic package.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.