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參數(shù)資料
| 型號： | FLL410IK-3C |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | L-Band High Power GaAs FET |
| 中文描述： | L波段高功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 241K |
| 代理商： | FLL410IK-3C |
L-Band High Power GaAs FET
FEATURES
High Output Power: Pout=46.0dBm(Typ.)
High Gain: GL=13.0dB(Typ.)
High PAE:
η
add=52%(Typ.)
Broad Band: 2.5~2.7GHz
Hermetically Sealed Package
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
CASE STYLE: IK
Edition 1.1
Oct 2003
1
FLL410IK-3C
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
Item
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V
DS
V
GS
PT
T
stg
15
-5
100
-65 to +175
V
V
W
o
C
Channel Temperature
T
ch
175
o
C
Linear Gain
*1
Limit
Typ.
4.0 -
Item
Symbol
Test Conditions
Unit
Drain Current
Pinch-off Voltage
Output Power
I
DSS
V
p
V
GSO
P
OUT
A
V
V
dB
dBm
Min.
-
Max.
Drain Current
I
dsr
A
-0.1 -0.3 -0.5
-5.0 -
-
45.0 46.0 -
12.0 13.0 -
-
5.9 7.6
V
DS
=12V
f=2.6 GHz
I
DS
=3A
Pin=35.0dBm
Power-added Efficiency
η
add
%
-
52 -
V
DS
=5V, V
GS
=0V
V
DS
=5V, I
DS
=110mA
I
GS
=-1.1mA
Gate-Source Breakdown Voltage
G
L
Thermal Resistance
*
１：
GL is measured at Pin=22.0dBm
R
th
Channel to Case
-
1.3 1.5
o
C/W
DESCRIPTION
The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is
designed for use in 2.5 – 2.7 GHz band amplifiers. This new product
is uniquely suited for use in MMDS applications as it offers excellent
linearity, high efficiency, high gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ESD
Class
Ⅲ
2000V
~
RECOMMENNDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
Item
Symbol
Condition
Unit
DC Input Voltage
Gate Current
V
DS
I
GF
≤
12
V
mA
Limit
R
G
=5
Operating Channel Temperature
Tch
≤
145
o
C
Gate Current
I
GR
R
G
=5
≤
88
≥
-25
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLL410IK-4C | L-Band High Power GaAs FET |
| FLL57MK | L-Band Medium & High Power GaAs FET |
| FLL600IQ-2C | L-Band High Power GaAs FET |
| FLL600IQ-2 | Push-Pull Configuration, Broad Frequency Range: 800 to 2000 MHz, Suitable for class AB operation |
| FLL600IQ-3 | L-Band Medium & High Power GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLL410IK-4C | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:L-Band High Power GaAs FET (46dBm@3.7GHz), Bulk |
| FLL500IQ-2 | 制造商:FUJITSU 功能描述: |
| FLL500IQ-3 | 制造商:FUJITSU 功能描述: |
| FLL57MK | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:Single-end,L-Band, 11.5dB, 2.3GHz, 990mA, Bulk |
| FLL600IQ-2 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Push-Pull Configuration, Broad Frequency Range: 800 to 2000 MHz, Suitable for class AB operation |
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