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參數資料
| 型號： | FLL410IK-4C |
| 廠商： | FUJITSU LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | L-Band High Power GaAs FET |
| 中文描述： | L BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 248K |
| 代理商： | FLL410IK-4C |
L-Band High Power GaAs FET
FEATURES
High Output Power: Pout=46.0dBm(Typ.)
High Gain: GL=11.5dB(Typ.)
High PAE:
η
add=44%(Typ.)
Broad Band: 3.4~3.7GHz
Hermetically Sealed Package
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
CASE STYLE: IK
Edition 1.1
Oct 2003
1
FLL410IK-4C
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
Item
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V
DS
V
GS
PT
T
stg
15
-5
107.0
-65 to +175
V
V
W
o
C
Channel Temperature
T
ch
175
o
C
Linear Gain *
1
Limit
Typ.
4.0 -
Item
Symbol
Test Conditions
Unit
Drain Current
Pinch-off Voltage
Output Power
I
DSS
V
p
P
OUT
A
V
V
dB
dBm
Min.
-
Max.
Drain Current
I
dsr
A
-0.1 -0.3 -0.5
-5.0 -
-
45.0 46.0 -
10.5 11.5 -
-
6.7 8.7
V
DS
=12V
f=3.6 GHz
I
DS
=3A
Pin=36.0dBm
Power-added Efficiency
η
add
%
-
44 -
V
DS
=5V , V
GS
=0V
V
DS
=5V , I
DS
=100mA
I
GS
=-1.0mA
Gate-Source Breakdown Voltage
V
GSO
G
L
Thermal Resistance
*
１：
GL is measured at Pin=22.0dBm
R
th
Channel to Case
-
1.0 1.4
o
C/W
DESCRIPTION
The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is
designed for use in 3.4 – 3.7 GHz band amplifiers. This new product
is uniquely suited for use in WLL applications as it offers excellent
linearity, high efficiency, high gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ESD
Class
Ⅲ
2000V
~
Item
Symbol
Condition
Unit
DC Input Voltage
Gate Current
V
DS
I
GF
≤
12
V
mA
Limit
R
G
=5
Operating Channel Temperature
Tch
≤
145
o
C
Gate Current
I
GR
R
G
=5
≤
117
≥
-23
mA
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
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