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參數資料
| 型號： | FMB200 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP Multi-Chip General Purpose Amplifier |
| 中文描述： | 500 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 50K |
| 代理商： | FMB200 |
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
OFF CHARACTERISTICS
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown
Voltage*
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
I
CES
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
ON CHARACTERISTICS
h
FE
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
C
obo
Output Capacitance
NF
Noise Figure
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
I
C
= 10
μ
A, I
B
= 0
I
C
= 1.0 mA, I
E
= 0
60
45
V
V
I
E
= 10
μ
A, I
C
= 0
V
CB
= 50 V, I
E
= 0
V
CE
= 40 V, I
E
= 10
V
EB
= 4.0 V, I
C
= 0
6.0
V
nA
nA
nA
50
50
50
V
CE
= 20 V, I
C
= 20 mA
V
CB
= 10 V, f = 1.0 MHz
I
C
= 100
μ
A, V
CE
= 5.0 V,
R
G
= 2.0 k
, f = 1.0 kHz
300
4.5
2.5
MHz
pF
dB
I
C
= 100
μ
A, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 150 mA, V
CE
= 5.0 V*
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 200 mA, I
B
= 20 mA*
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 200 mA, I
B
= 20 mA*
80
100
100
450
350
0.2
0.4
0.85
1.0
V
CE(
sat
)
Collector-Emitter Saturation Voltage
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
P 68
0.1
1
10
100
300
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V
C
25 °C
- 40 oC
125 oC
β
= 10
Typical Pulsed Current Gain
vs Collector Current
0.01
0.1
I - COLLECTOR CURRENT (mA)
1
10
100
0
100
200
300
400
500
h
F
125 °C
25 °C
- 40 °C
V = 5V
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
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相關代理商/技術參數 |
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|---|---|
| FMB200_Q | 功能描述:兩極晶體管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| FMB2222A | 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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