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參數(shù)資料
| 型號： | FMC6G10US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Sweep Function Generator; Bandwidth Max:20MHz; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
| 中文描述： | 10 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 21PM-AA, 21 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 649K |
| 代理商： | FMC6G10US60 |
2001 Fairchild Semiconductor Corporation
FMC6G10US60 Rev. A3
F
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
2
4
6
8
0
5
10
15
20
25
30
35
40
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
℃
C
C
Collector - Emitter Voltage, V
CE
[V]
1
10
0
5
10
15
20
25
30
Common Emitter
V
GE
= 15V
T
C
= 25
℃
━━
T
C
= 125
℃
------
C
C
Collector - Emitter Voltage, V
CE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
℃
20A
10A
I
C
= 5A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
2
4
6
8
10
12
14
16
0.1
1
10
100
1000
Duty cycle : 50%
T
C
= 100
℃
Power Dissipation = 18W
V
= 300V
Load Current : peak of square wave
Frequency [KHz]
L
-50
0
50
100
150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
20A
10A
I
C
= 5A
Common Emitter
V
GE
= 15V
C
Case Temperature, T
C
[
℃
]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
℃
20A
10A
I
C
= 5A
C
Gate - Emitter Voltage, V
GE
[V]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FMC6G15US60 | Compact & Complex Module |
| FMC6G20US60 | Multi-Function Generator RoHS Compliant: NA |
| FMC6G30US60 | Function Generator; Bandwidth Max:120MHz; Amplitude Accuracy :0.01dB; Frequency Max:120MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
| FMC6G50US60 | Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:21.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 21.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency |
| FMC7G15US60 | Compact & Complex Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FMC6G15US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMC6G20US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMC6G30US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMC6G50US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMC700 | 制造商:Black Box Corporation 功能描述:CAT 7 OUTLET 4 PORT JACK |
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