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參數資料
| 型號： | FMG1G75US60L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Molding Type Module |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 7PM-GA, 7 PIN |
| 文件頁數： | 5/9頁 |
| 文件大小： | 656K |
| 代理商： | FMG1G75US60L |
2002 Fairchild Semiconductor Corporation
FMG1G75US60L Rev. A
F
Fig 7. Capacitance Characteristics
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
0
2000
4000
6000
8000
10000
12000
14000
16000
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
C
Collector - Emitter Voltage, V
CE
[V]
1
10
10
100
1000
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 75A
T
C
= 25
T
C
= 125
0
C
0
C
Ton
Tr
S
Gate Resistance, R
G
[
]
1
10
100
1000
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 75A
T
C
= 25
T
C
= 125
0
C
0
C
Toff
Tf
S
Gate Resistance, R
g
[
]
1
10
1000
10000
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 75A
T
C
= 25
T
C
= 125
0
C
0
C
Eon
Eoff
S
Gate Resistance, R
G
[
]
20
40
60
80
100
120
140
10
100
Tr
Ton
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
R
G
= 3.3
T
C
= 25
T
C
= 125
0
C
0
C
S
Collector Current, I
C
[A]
20
40
60
80
100
120
140
100
1000
Tf
Toff
Toff
Tf
Collector Current, I
C
[A]
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
R
G
= 3.3
T
C
= 25
T
C
= 125
0
C
0
C
S
Fig 8. Turn-On Characteristics vs.
Gate Resistance
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