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參數資料
| 型號： | FMM200-004PL |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Trench Power MOSFET |
| 中文描述： | 200 A, 40 V, 0.0039 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOPLUS, I4PAC-5 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 46K |
| 代理商： | FMM200-004PL |
1 - 2
2004 IXYS All rights reserved
4
IXYS reserves the right to change limits, test conditions and dimensions.
FMM 200-004PL
I
D25
V
DSS
R
DSon typ.
= 2.8 m
= 200 A
= 40 V
Trench Power MOSFET
logic level gate control
Phaseleg Topology
in ISOPLUS i4-PAC
TM
Features
trench MOSFET
- logic level gate control
- very low on state resistance R
DSon
- fast switching
- fast body diode
ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
automotive
- AC drives - starter generator
for 12/14V etc.
- choppers - replacing series resistors
for DC drives, heating etc.
- DC-DC converters
- electronic switches -replacing relays
and fuses
power supplies
- DC-DC converters
- solar inverters
- converters for fuel cells
battery supplied systems
- choppers or inverters for drives in
hand held tools
- battery chargers
MOSFET T1/T2
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25°C to T
VJmax
40
V
V
GS
±20
V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
200
150
A
A
I
F25
I
F90
(body diode) T
C
= 25°C
(body diode) T
C
= 90°C
110
70
A
A
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS
= 10 V;
I
D
= 100 A
2.8
3.9 m
V
GSth
V
DS
= 20 V;
I
D
= 1 mA
1.1
2
V
I
DSS
V
DS
= 40 V;
V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
1
μA
mA
0.1
I
GSS
V
GS
= ±20 V; V
DS
= 0 V
200
nA
Q
g
Q
gs
Q
gd
82
17
25
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
70
270
260
190
ns
ns
ns
ns
V
F
(body diode) I
F
= 100 A;
V
GS
= 0 V
1.2
1.7
V
t
rr
(body diode) I
F
= 20A;
-di/dt = 100A/μs; V
DS
= 20V
70
ns
R
thJC
R
thJS
1.0 K/W
K/W
with heat transfer paste
1.5
V
GS
= 5 V; V
DS
= 14 V; I
D
= 25 A
V
= 5 V; V
DS
= 30 V
I
D
= 25 A; R
G
= 10
1
5
Preliminary data
T1
T2
1
5
3
4
2
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