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參數(shù)資料
| 型號： | FMM5805GJ-1 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 17.7-19.7GHz Power Amplifier MMIC |
| 中文描述： | 17.7 - 19.7GHz功率放大器單片 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 235K |
| 代理商： | FMM5805GJ-1 |
FMM5805GJ-1
17.7-19.7GHz Power Amplifier MMIC
Item
Symbol
Conditions
Unit
Limits
Typ.
17.7 - 19.7
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Input Return Loss
RLin
-
-
-10
dB
Output Return Loss
RLout
-
-6
-
dB
Frequency Range
f
GHz
Output Power at 1 dB G.C.P.
29
31
-
dBm
P
1dB
Power Gain at 1 dB G.C.P.
18
20
25
dB
G
1dB
G.C.P.: Gain Compression Point
Power-Added Efficiency at 1dB G.C.P.
-
27
-
%
η
add
Gain Flatness
-
1.0
-
dB
G
Drain Current at 1 dB G.C.P.
-
800
950
mA
Iddrf
Iggrf
Gate Current at 1 dB G.C.P.
-
-12
-15
mA
VDD = 6V
VGG = -5V
f= 17.7-19.7GHz
ZS = ZL = 50
1
Edition 1.1
September 2004
Parameter
DC Input Voltage
DC Input Voltage
Input Power
Storage Temperature
Operating Case Temperature
Symbol
VDD
VGG
Pin
10
-7
22
-55 to +125
-40 to +85
V
V
dBm
°
C
°
C
Tstg
Top
Rating
Condition
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
°
C)
Eudyna recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
FEATURES
High Output Power: P1dB= 31.0dBm(Typ.)
High Gain: G1dB= 20.0dB(Typ.)
High PAE:
η
add = 27% (Typ.)
Low In/Out VSWR
Broad Band: 17.7 ~ 19.7GHz
Impedance Matched Zin/Zout = 50
DESCRIPTION
The FMM5805GJ-1 is a high-gain, high power, 3-stage MMIC amplifier
designed for operation in the 17.7-19.7GHz frequency range.
This amplifier has an input and output designed for use in 50
systems.This device is well suited for point-to-point communication
applications.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
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